Leading-edge flow criticality as a governing factor in leading-edge vortex initiation in unsteady airfoil flows

A leading-edge suction parameter (LESP) that is derived from potential flow theory as a measure of suction at the airfoil leading edge is used to study initiation of leading-edge vortex (LEV) formation in this article. The LESP hypothesis is presented, which states that LEV formation in unsteady flows for specified airfoil shape and Reynolds number occurs at a critical constant value of LESP, regardless of motion kinematics. This hypothesis is tested and validated against a large set of data from CFD and experimental studies of flows with LEV formation. The hypothesis is seen to hold except in cases with slow-rate kinematics which evince significant trailing-edge separation (which refers here to separation leading to reversed flow on the aft portion of the upper surface), thereby establishing the envelope of validity. The implication is that the critical LESP value for an airfoil–Reynolds number combination may be calibrated using CFD or experiment for just one motion and then employed to predict LEV initiation for any other (fast-rate) motion. It is also shown that the LESP concept may be used in an inverse mode to generate motion kinematics that would either prevent LEV formation or trigger the same as per aerodynamic requirements.     

Isometric embeddings into Heisenberg groups

We study isometric embeddings of a Euclidean space or a Heisenberg group into a higher dimensional Heisenberg group, where both the source and target space are equipped with an arbitrary left-invariant homogeneous distance that is not necessarily sub-Riemannian. We show that if all infinite geodesics in the target are straight lines, then such an embedding must be a homogeneous homomorphism. We discuss a necessary and certain sufficient conditions for the target space to have this ‘geodesic linearity property’, and we provide various examples.     

On structure-preserving connections

In this paper we find the formula of connections under which an almost complex structure is covariantly constant. These types of connections on anti-Kähler–Codazzi manifolds are described. Also, twin metric-preserving connections are analyzed for quasi-Kähler manifolds. Finally, anti-Hermitian Chern connections are investigated.     

Repdigits as sums of three Pell numbers

In this paper, all base 10 repdigits expressible as sums of three Pell numbers are found.     

Integral Representations of the Large and Little Schröder Numbers

In the paper, the authors establish several integral representations for the generating functions of the large and little Schröder numbers and for the large and little Schröder numbers.     

Harmonically pump a femtosecond optical parametric oscillator to 1.13 GHz by a femtosecond 515 nm laser

We demonstrate a harmonically pumped femtosecond optical parametric oscillator(OPO)laser using a frequency-doubled mode-locked Yb:KGW laser at a repetition rate of 75.5 MHz as the pump laser.Based on a bismuth borate nonlinear crystal,repetition rates up to 1.13 GHz are realized,which is 15 times that of the pump laser.The signal wavelength is tunable from 700 nm to 887 nm.The maximum power of the signal is 207 m W at the central wavelength of 750 nm and the shortest pulse duration is 117 fs at 780 nm.The beam quality(M^2 factor)in the horizontal and vertical directions of the output beam are 1.077 and 1.141,respectively.     

排名聚合算法在少量长列表聚合中的性能比较分析

排名聚合将多个排名列表聚合成一个综合排名列表,可应用于推荐系统、链路预测、元搜索、提案评选等.当前已有工作从不同角度对不同排名聚合算法进行了综述、比较,但存在算法种类较少、数据统计特性不清晰、评价指标不够合理等局限性.不同排名聚合算法在提出时均声称优于已有算法,但是用于比较的方法不同,测试的数据不同,应用的场景不同,因此何种算法最能适应某一任务在很多情况下仍不甚清楚.本文基于Mallows模型,提出一套生成统计特性可控的不同类型的排名列表的算法,使用一个可应用于不同类型排名列表的通用评价指标,介绍9种排名聚合算法以及它们在聚合少量长列表时的表现.结果发现启发式方法虽然简单,但是在排名列表相似度较高、列表相对简单的情况下,能够接近甚至超过一些优化类方法的结果;列表中平局数量的增长会降低聚合排名的一致性并增加波动;列表数量的增加对聚合效果的影响呈现非单调性.整体而言,基于距离优化的分支定界方法 (FAST)优于其他各类算法,在不同类型的排名列表中表现非常稳定,能够很好地完成少量长列表的排名聚合.     

On-chip multiphoton Greenberger–Horne–Zeilinger state based on integrated frequency combs

One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.     

Surface Modification of ZrO2–3Y2O3 with Highintensity Pulsed N2+ Ion Beams

Russian Physics Journal -